Buy 312A3435P2 Part of Bae Systems Controls Inc with NSN 5962-01-287-2397
MPN: 312A3435P2
Manufacturer: Bae Systems Controls Inc
NSN: 5962-01-287-2397
Item Name: Microcircuit Memory
CAGE Code: 89954
Part number 312A3435P2 is available for immediate shipping. The NSN for part number is 5962012872397. This part is manufactured by Bae Systems Controls Inc. It is described as Microcircuit Memory. Would you like to request a quote for part number 312A3435P2? Please fill out the form.
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NSN Information for Part Number 312A3435P2 with NSN 5962-01-287-2397, 5962012872397
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-287-2397 Item Description: Microcircuit Memory | 5962 | 012872397 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 312a3435p2 | 2 | 9 | 5 |
Characteristics Data of NSN 5962-01-287-2397, 5962012872397
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 415 INCHES MINIMUM AND 0 435 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 280 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 055 INCHES MINIMUM AND 0 075 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN17 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 LEADLESS |
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