Buy AB 1 30 9835 Part of Bae Systems Gcs International Ltd with NSN 5962-01-350-2139
MPN: AB 1 30 9835
Alternate P/N: AB1309835
Manufacturer: Bae Systems Gcs International Ltd
NSN: 5962-01-350-2139
Item Name: Microcircuit Memory
CAGE Code: K4244
Part number AB 1 30 9835 is available for immediate shipping. The NSN for part number is 5962013502139. This part is manufactured by Bae Systems Gcs International Ltd. It is described as Microcircuit Memory. Would you like to request a quote for part number AB 1 30 9835? Please fill out the form.
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NSN Information for Part Number AB 1 30 9835 with NSN 5962-01-350-2139, 5962013502139
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-350-2139 Item Description: Microcircuit Memory | 5962 | 013502139 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Ab 1 30 9835 | 5 | 2 | 5 |
Characteristics Data of NSN 5962-01-350-2139, 5962013502139
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITSDIGITALBIPOLARFIRST-IN FIRST-OUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM INPUT |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
| MEMORY | ADAT | BODY WIDTH0 310 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING990 0 MILLIWATTS |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN7 INPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES MAXIMUM OUTPUT SINK |
| MEMORY | ADAQ | BODY LENGTH0 960 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510 |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND BIPOLAR |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CZER | MEMORY DEVICE TYPEFIRST-IN FIRST-OUT |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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