Buy 201842-001 Part of Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-199-9161
MPN: 201842-001
Alternate P/N: 201842001
NSN: 5962-01-199-9161
Item Name: Microcircuit Memory
CAGE Code: 81413
Part number 201842-001 is available for immediate shipping. The NSN for part number is 5962011999161. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. It is described as Microcircuit Memory. Would you like to request a quote for part number 201842-001? Please fill out the form.
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NSN Information for Part Number 201842-001 with NSN 5962-01-199-9161, 5962011999161
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-199-9161 Item Description: Microcircuit Memory | 5962 | 011999161 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
201842-001 | 1 | 2 | 3 |
Characteristics Data of NSN 5962-01-199-9161, 5962011999161
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 210 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING855 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONRECEIVING SETCOUNTERMEASURES ANALR-56C |
MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND ERASABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND WENABLE AND BIDIRECTIONAL |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 6 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TEST | TEST DATA DOCUMENT81413-201842 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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