Buy 333510-000 Part of Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-358-2694

MPN: 333510-000

Alternate P/N: 333510000

CAGE Code: 81413

Part number 333510-000 is available for immediate shipping. The NSN for part number is 5962013582694. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. It is described as Microcircuit Memory. Would you like to request a quote for part number 333510-000? Please fill out the form.

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NSN Information for Part Number 333510-000 with NSN 5962-01-358-2694, 5962013582694

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-358-2694

Item Description:

Microcircuit Memory

59620135826940NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
333510-000523

Characteristics Data of NSN 5962-01-358-2694, 5962013582694

MRCCriteriaCharacteristic
MEMORYADATBODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCTQXCURRENT RATING PER CHARACTERISTIC180 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE
MEMORYCZEQTIME RATING PER CHACTERISTIC30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT AND 30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORYADAQBODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM
MEMORYCQSZINCLOSURE CONFIGURATIONLEADLESS FLAT PACK
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN22 INPUT
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510
MEMORYFEATSPECIAL FEATURESMOUNTED ON PIN GRAD ARRAY UNIT
MEMORYADAUBODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1 2 WATTS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCXCYPART NAME ASSIGNED BY CONTROLLING AGENCYREGISTERED AND-OR LOGIC ARRAY
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZERMEMORY DEVICE TYPEPAL
MEMORYTTQYTERMINAL TYPE AND QUANTITY28 LEADLESS
MEMORYCBBLFEATURES PROVIDEDBIDIRECTIONAL AND BIPOLAR AND MONOLITHIC AND PROGRAMMED AND WCLOCK
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