Buy 1372FW1008-001 Part of Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-367-1277
MPN: 1372FW1008-001
Alternate P/N: 1372FW1008001
NSN: 5962-01-367-1277
Item Name: Microcircuit Memory
CAGE Code: 72314
Part number 1372FW1008-001 is available for immediate shipping. The NSN for part number is 5962013671277. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. It is described as Microcircuit Memory. Would you like to request a quote for part number 1372FW1008-001? Please fill out the form.
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NSN Information for Part Number 1372FW1008-001 with NSN 5962-01-367-1277, 5962013671277
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-367-1277 Item Description: Microcircuit Memory | 5962 | 013671277 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1372fw1008-001 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-367-1277, 5962013671277
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 270 INCHES MINIMUM AND 1 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 300 INCHES MINIMUM AND 0 320 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONEO LOROPS |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROGRAMMED |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAU | BODY HEIGHT0 190 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING650 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDERASABLE AND PROGRAMMED AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS NOMINAL ACCESS |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | FEAT | SPECIAL FEATURESESDALTERED ITEM PROGRAMMED USING 672685962-8686401LX USING FILE 1055U27 JED WITH CHECK SUM 7F85 |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
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