Buy 1372FW1012-001 Part of Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-367-1280
MPN: 1372FW1012-001
Alternate P/N: 1372FW1012001
NSN: 5962-01-367-1280
Item Name: Microcircuit Memory
CAGE Code: 72314
Part number 1372FW1012-001 is available for immediate shipping. The NSN for part number is 5962013671280. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. It is described as Microcircuit Memory. Would you like to request a quote for part number 1372FW1012-001? Please fill out the form.
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NSN Information for Part Number 1372FW1012-001 with NSN 5962-01-367-1280, 5962013671280
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-367-1280 Item Description: Microcircuit Memory | 5962 | 013671280 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1372fw1012-001 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-367-1280, 5962013671280
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAU | BODY HEIGHT0 190 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING650 0 MILLIWATTS |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | FEAT | SPECIAL FEATURESESDALTERED ITEM PROGRAMMED USING 672685962-8686401LX USING FILE 1055U56 JED WITH CHECK SUM 37DE |
| MEMORY | ADAQ | BODY LENGTH1 270 INCHES MINIMUM AND 1 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 300 INCHES MINIMUM AND 0 320 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONEO LOROPS |
| MEMORY | CBBL | FEATURES PROVIDEDERASABLE AND PROGRAMMED AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROGRAMMED |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS AF OUTPUT MEGAWATTS |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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