Buy 1280PALC22V10-2 Part of Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-371-1421
MPN: 1280PALC22V10-2
Alternate P/N: 1280PALC22V102
NSN: 5962-01-371-1421
Item Name: Microcircuit Memory
CAGE Code: 72314
Part number 1280PALC22V10-2 is available for immediate shipping. The NSN for part number is 5962013711421. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. It is described as Microcircuit Memory. Would you like to request a quote for part number 1280PALC22V10-2? Please fill out the form.
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NSN Information for Part Number 1280PALC22V10-2 with NSN 5962-01-371-1421, 5962013711421
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-371-1421 Item Description: Microcircuit Memory | 5962 | 013711421 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1280palc22v10-2 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-371-1421, 5962013711421
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC40 00 NANOSECONDS NOMINAL ACCESS |
| MEMORY | ZZZX | DEPARTURE FROM CITED DESIGNATORALTERED BY PROGRAMMINGTESTING & MARKING |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDCOMPATIBLE CMOS AND MONOLITHIC AND PROGRAMMED AND ULTRAVIOLET ERASABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM ABSOLUTE INPUT AND 7 0 VOLTS MAXIMUM ABSOLUTE INPUT |
| MEMORY | ZZZP | PURCHASE DESCRIPTION IDENTIFICATION72314-1280PALC22V10-2 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC16 00 MILLIAMPERES REVERSE CURRENT DC NOMINAL |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYDIGITALCMOS UV ERASABLEPROGRAMMABLE ARRAY LOGICMONOLITHIC SILICON |
| MEMORY | CZES | HYBRID TECHNOLOGY TYPEMONOLITHIC |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 2 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONCONVERTSIGNDA EI FSCM 72314 |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA67268-5962-8753903LA GOVERNMENT STANDARD |
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