Buy 1372FW1053-001 Part of Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-373-5203
MPN: 1372FW1053-001
Alternate P/N: 1372FW1053001
NSN: 5962-01-373-5203
Item Name: Microcircuit Memory
CAGE Code: 72314
Part number 1372FW1053-001 is available for immediate shipping. The NSN for part number is 5962013735203. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. It is described as Microcircuit Memory. Would you like to request a quote for part number 1372FW1053-001? Please fill out the form.
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NSN Information for Part Number 1372FW1053-001 with NSN 5962-01-373-5203, 5962013735203
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-373-5203 Item Description: Microcircuit Memory | 5962 | 013735203 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1372fw1053-001 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-373-5203, 5962013735203
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAU | BODY HEIGHT0 180 INCHES MINIMUM AND 0 200 INCHES MAXIMUM |
| MEMORY | AGAV | END ITEM IDENTIFICATIONEO LOROPS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-5 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSITIVE ALTERED ITEMMADE FROM DEVICE 5962-8753901LXPROGRAMMED PER 1061-U56 JEDFD137200053-001CHECKSUM 962F NHA PN 1372AE1061 |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | ADAQ | BODY LENGTH1 260 INCHES MINIMUM AND 1 280 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 290 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND COMPATIBLE CMOS AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED AND TESTED TO MIL-STD-883 AND ULTRAVIOLET ERASABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROGRAMMED |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
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