Buy 1372FW1103-001 Part of Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-374-2552
MPN: 1372FW1103-001
Alternate P/N: 1372FW1103001
NSN: 5962-01-374-2552
Item Name: Microcircuit Memory
CAGE Code: 72314
Part number 1372FW1103-001 is available for immediate shipping. The NSN for part number is 5962013742552. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. It is described as Microcircuit Memory. Would you like to request a quote for part number 1372FW1103-001? Please fill out the form.
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NSN Information for Part Number 1372FW1103-001 with NSN 5962-01-374-2552, 5962013742552
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-374-2552 Item Description: Microcircuit Memory | 5962 | 013742552 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | U | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1372fw1103-001 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-374-2552, 5962013742552
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 260 INCHES MINIMUM AND 1 280 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 180 INCHES MINIMUM AND 0 200 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC4 5 VOLTS MINIMUM TOTAL SUPPLY AND 5 5 VOLTS MAXIMUM TOTAL SUPPLY |
| MEMORY | CZER | MEMORY DEVICE TYPEPROGRAMMED |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAT | BODY WIDTH0 290 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | AGAV | END ITEM IDENTIFICATIONEO LOROPS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMED AND BURN IN MIL-STD-883 CLASS B |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITSDIGITALCMOS 8K X 8 UV EPROMMONOLITHIC SILICON MICROCIRCUITPROGRAMMED |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC45 00 NANOSECONDS NOMINAL ACCESS |
| MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSITIVE ALTERED ITEMMADE FROM PN 5962-8751505LAFILENAME 1058-U36 P82CHECKSUM 05FC50 NHA PN 1372AE1058 |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
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