Buy 1372FW1066-001 Part of Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-375-0370
MPN: 1372FW1066-001
Alternate P/N: 1372FW1066001
NSN: 5962-01-375-0370
Item Name: Microcircuit Memory
CAGE Code: 72314
Part number 1372FW1066-001 is available for immediate shipping. The NSN for part number is 5962013750370. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. It is described as Microcircuit Memory. Would you like to request a quote for part number 1372FW1066-001? Please fill out the form.
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NSN Information for Part Number 1372FW1066-001 with NSN 5962-01-375-0370, 5962013750370
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-375-0370 Item Description: Microcircuit Memory | 5962 | 013750370 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | U | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1372fw1066-001 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-375-0370, 5962013750370
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 2 WATTS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONEO LOROPS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMED |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSTIVEALTERED ITEMDEVICE TO BE PROGRAMMED IS PN 5962-8753901LACAGE 67268FILENAME 1058-U8 JED SUMCHECK 9D2D NHA PN 1372AE1058 CAGE 72314 |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC5 50 MILLIAMPERES FORWARD CURRENT NONREPETITIVE MAXIMUM PEAK TOTAL VALUE MICROAMPERES |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC25 00 NANOSECONDS MAXIMUM PROPAGATION DELAY |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT PROGRAMMED MICROCIRCUITSMEMORYDIGITALCMOS UV ERASABLEPROGRAMMABLE ARRAY LOGICMONOLITHIC SILICON |
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