Buy 6011800-001 Part of Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems with NSN 5962-01-272-7304
MPN: 6011800-001
Alternate P/N: 6011800001
NSN: 5962-01-272-7304
Item Name: Microcircuit Memory
CAGE Code: 12436
Part number 6011800-001 is available for immediate shipping. The NSN for part number is 5962012727304. This part is manufactured by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems. It is described as Microcircuit Memory. Would you like to request a quote for part number 6011800-001? Please fill out the form.
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NSN Information for Part Number 6011800-001 with NSN 5962-01-272-7304, 5962012727304
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-272-7304 Item Description: Microcircuit Memory | 5962 | 012727304 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 6011800-001 | 5 | 9 | 3 |
Characteristics Data of NSN 5962-01-272-7304, 5962012727304
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 200 INCHES NOMINAL |
| MEMORY | ADAT | BODY WIDTH0 295 INCHES NOMINAL |
| MEMORY | ADAU | BODY HEIGHT0 120 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDED3-STATE OUTPUT AND HIGH PERFORMANCE AND HIGH SPEED AND HIGH RELIABILITY |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN18 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC70 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 70 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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