Buy 310403P10 Part of Bae Systems Information And Electronic Systems Integration Inc with NSN 5962-01-016-7258
Part number 310403P10 is available for immediate shipping. The NSN for part number is 5962010167258. This part is manufactured by Bae Systems Information And Electronic Systems Integration Inc. It is described as Microcircuit Memory. Would you like to request a quote for part number 310403P10? Please fill out the form.
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NSN Information for Part Number 310403P10 with NSN 5962-01-016-7258, 5962010167258
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-016-7258 Item Description: Microcircuit Memory | 5962 | 010167258 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | U | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
310403p10 | C | 2 | 3 |
Characteristics Data of NSN 5962-01-016-7258, 5962010167258
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 795 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 120 INCHES MINIMUM AND 0 195 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING650 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND WBUFFERED OUTPUT AND WDECODED OUTPUT AND 3-STATE OUTPUT AND HIGH SPEED AND WENABLE AND WSTORAGE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATOR-0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 5 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TEST | TEST DATA DOCUMENT94117-310403 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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