Buy 150752-0001 Part of Bae Systems Information And Electronic Systems Integration Inc with NSN 5962-01-159-4945
MPN: 150752-0001
Alternate P/N: 1507520001
NSN: 5962-01-159-4945
Item Name: Microcircuit Memory
CAGE Code: 19397
Part number 150752-0001 is available for immediate shipping. The NSN for part number is 5962011594945. This part is manufactured by Bae Systems Information And Electronic Systems Integration Inc. It is described as Microcircuit Memory. Would you like to request a quote for part number 150752-0001? Please fill out the form.
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NSN Information for Part Number 150752-0001 with NSN 5962-01-159-4945, 5962011594945
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-159-4945 Item Description: Microcircuit Memory | 5962 | 011594945 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 150752-0001 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-159-4945, 5962011594945
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 4 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND WACTIVE PULL-UP |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC90 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 90 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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