Buy 5812751P13 Part of Bae Systems Information And Electronic Systems Integration Inc with NSN 5962-01-254-6232
Part number 5812751P13 is available for immediate shipping. The NSN for part number is 5962012546232. This part is manufactured by Bae Systems Information And Electronic Systems Integration Inc. It is described as Microcircuit Memory. Would you like to request a quote for part number 5812751P13? Please fill out the form.
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NSN Information for Part Number 5812751P13 with NSN 5962-01-254-6232, 5962012546232
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-254-6232 Item Description: Microcircuit Memory | 5962 | 012546232 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | G | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5812751p13 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-254-6232, 5962012546232
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 970 INCHES MINIMUM AND 1 010 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 280 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 155 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 02 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND HIGH IMPEDANCE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTGOLD |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | PMLC | PRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACES OPTION GOLD |
| MEMORY | PRMT | PRECIOUS MATERIALGOLD |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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