Buy 703673-1 Part of Bae Systems Information And Electronic Systems Integration Inc with NSN 5962-01-294-0109
MPN: 703673-1
Alternate P/N: 7036731
NSN: 5962-01-294-0109
Item Name: Microcircuit Memory
CAGE Code: 80249
Part number 703673-1 is available for immediate shipping. The NSN for part number is 5962012940109. This part is manufactured by Bae Systems Information And Electronic Systems Integration Inc. It is described as Microcircuit Memory. Would you like to request a quote for part number 703673-1? Please fill out the form.
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NSN Information for Part Number 703673-1 with NSN 5962-01-294-0109, 5962012940109
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-294-0109 Item Description: Microcircuit Memory | 5962 | 012940109 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 703673-1 | 2 | 1 | 5 |
Characteristics Data of NSN 5962-01-294-0109, 5962012940109
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 040 INCHES MINIMUM AND 1 500 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 480 INCHES MINIMUM AND 0 630 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 070 INCHES MINIMUM AND 0 350 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING525 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND POSITIVE OUTPUTS AND WENABLE AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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