Buy P4C1981-25CMB Part of Pyramid Semiconductor Corp with NSN 5962-01-359-0333
MPN: P4C1981-25CMB
Alternate P/N: P4C198125CMB
Manufacturer: Pyramid Semiconductor Corp
NSN: 5962-01-359-0333
Item Name: Microcircuit Memory
CAGE Code: 3DTT2
Part number P4C1981-25CMB is available for immediate shipping. The NSN for part number is 5962013590333. This part is manufactured by Pyramid Semiconductor Corp. It is described as Microcircuit Memory. Would you like to request a quote for part number P4C1981-25CMB? Please fill out the form.
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NSN Information for Part Number P4C1981-25CMB with NSN 5962-01-359-0333, 5962013590333
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-359-0333 Item Description: Microcircuit Memory | 5962 | 013590333 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| P4C1981-25CMB | 5 | 2 | 5 |
Characteristics Data of NSN 5962-01-359-0333, 5962013590333
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 385.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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