Buy G450397 101 Part of Raytheon Company with NSN 5962-01-351-7254
MPN: G450397 101
Alternate P/N: G450397101
Manufacturer: Raytheon Company
NSN: 5962-01-351-7254
Item Name: Microcircuit Memory
CAGE Code: 54X10
Part number G450397 101 is available for immediate shipping. The NSN for part number is 5962013517254. This part is manufactured by Raytheon Company. It is described as Microcircuit Memory. Would you like to request a quote for part number G450397 101? Please fill out the form.
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NSN Information for Part Number G450397 101 with NSN 5962-01-351-7254, 5962013517254
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-351-7254 Item Description: Microcircuit Memory | 5962 | 013517254 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| G450397 101 | 2 | 2 | 3 |
Characteristics Data of NSN 5962-01-351-7254, 5962013517254
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1 |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 45.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM DELAY |
| FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.6 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED AND ELECTROSTATIC SENSITIVE AND ERASABLE AND RADIATION HARDENED |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 225.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CZER | MEMORY DEVICE TYPE | EEPROM |
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