Buy G111283-311 Part of Raytheon Technical Services Company with NSN 5962-01-214-4456
MPN: G111283-311
Alternate P/N: G111283311
Manufacturer: Raytheon Technical Services Company
NSN: 5962-01-214-4456
Item Name: Microcircuit Memory
CAGE Code: 3B150
Part number G111283-311 is available for immediate shipping. The NSN for part number is 5962012144456. This part is manufactured by Raytheon Technical Services Company. It is described as Microcircuit Memory. Would you like to request a quote for part number G111283-311? Please fill out the form.
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NSN Information for Part Number G111283-311 with NSN 5962-01-214-4456, 5962012144456
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-214-4456 Item Description: Microcircuit Memory | 5962 | 012144456 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| G111283-311 | 2 | 2 | 3 |
Characteristics Data of NSN 5962-01-214-4456, 5962012144456
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 050 INCHES MINIMUM AND 1 110 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 360 INCHES MINIMUM AND 0 410 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 080 INCHES MINIMUM AND 0 140 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONRADAR SET ANFPS-115 |
| MEMORY | CBBL | FEATURES PROVIDEDWENABLE AND BIPOLAR AND HIGH IMPEDANCE AND ASYNCHRONOUS AND SYNCHRONOUS AND EDGE TRIGGERED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY512 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT |
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