Buy K6T1008C2EDB7000 Part of Samsung Semiconductor Inc with NSN 5962-01-408-2869
MPN: K6T1008C2EDB7000
Manufacturer: Samsung Semiconductor Inc
NSN: 5962-01-408-2869
Item Name: Microcircuit Memory
CAGE Code: 0DUN9
Part number K6T1008C2EDB7000 is available for immediate shipping. The NSN for part number is 5962014082869. This part is manufactured by Samsung Semiconductor Inc. It is described as Microcircuit Memory. Would you like to request a quote for part number K6T1008C2EDB7000? Please fill out the form.
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NSN Information for Part Number K6T1008C2EDB7000 with NSN 5962-01-408-2869, 5962014082869
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-408-2869 Item Description: Microcircuit Memory | 5962 | 014082869 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| K6t1008c2edb7000 | 5 | 2 | 5 |
Characteristics Data of NSN 5962-01-408-2869, 5962014082869
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10) |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS |
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