Buy FA3413U Part of Solid State Devices Inc with NSN 5961-00-526-7975
MPN: FA3413U
Manufacturer: Solid State Devices Inc
NSN: 5961-00-526-7975
Item Name: Semiconductor Devic
CAGE Code: 30043
Part number FA3413U is available for immediate shipping. The NSN for part number is 5961005267975. This part is manufactured by Solid State Devices Inc. It is described as Semiconductor Devic. Would you like to request a quote for part number FA3413U? Please fill out the form.
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NSN Information for Part Number FA3413U with NSN 5961-00-526-7975, 5961005267975
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-526-7975 Item Description: Semiconductor Devic | 5961 | 005267975 | 0 | N | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | U | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Fa3413u | 2 | 9 | 5 |
Characteristics Data of NSN 5961-00-526-7975, 5961005267975
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.160 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM 1ST SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 2ND SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 3RD SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.075 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 1ST SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 2ND SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 3RD SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 1ST SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 3RD SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 1ST SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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