Buy TBP18S22N Part of Texas Instruments Incorporated with NSN 5962-01-119-4703
MPN: TBP18S22N
Manufacturer: Texas Instruments Incorporated
NSN: 5962-01-119-4703
Item Name: Microcircuit Memory
CAGE Code: 01295
Part number TBP18S22N is available for immediate shipping. The NSN for part number is 5962011194703. This part is manufactured by Texas Instruments Incorporated. It is described as Microcircuit Memory. Would you like to request a quote for part number TBP18S22N? Please fill out the form.
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NSN Information for Part Number TBP18S22N with NSN 5962-01-119-4703, 5962011194703
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-119-4703 Item Description: Microcircuit Memory | 5962 | 011194703 | N | B | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| A | 0 | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Tbp18s22n | 3 | 1 | 5 |
Characteristics Data of NSN 5962-01-119-4703, 5962011194703
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 930 INCHES MINIMUM AND 0 975 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 180 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING550 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND PROGRAMMED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CRHL | BIT QUANTITY2048 |
| MEMORY | CSWJ | WORD QUANTITY256 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 2 VOLTS MINIMUM POWER SOURCE AND 5 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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