Buy 2SB434 Part of Toshiba Corp with NSN 5961-01-312-6779
Part number 2SB434 is available for immediate shipping. The NSN for part number is 5961013126779. This part is manufactured by Toshiba Corp. It is described as Transistor. Would you like to request a quote for part number 2SB434? Please fill out the form.
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NSN Information for Part Number 2SB434 with NSN 5961-01-312-6779, 5961013126779
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-312-6779 Item Description: Transistor | 5961 | 013126779 | 0 | N | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | A | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 2sb434 | 5 | 1 | 5 |
Characteristics Data of NSN 5961-01-312-6779, 5961013126779
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC |
| ABHP | OVERALL LENGTH | 1.145 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0.381 INCHES NOMINAL |
| ABMK | OVERALL WIDTH | 0.400 INCHES NOMINAL |
| AGAV | END ITEM IDENTIFICATION | 6625-01-230-7325 RECORDER,TAPE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CTRD | POWER RATING PER CHARACTERISTIC | 25.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| ABKW | OVERALL HEIGHT | 0.165 INCHES NOMINAL |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
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